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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION *Low Noise *High Gain Bandwidth Product APPLICATIONS *Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous -50 mA PC Collector Power Dissipation @TC=25 0.3 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) ICBO hFE fT COB rbb' * CC PG PG PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Output Capacitance Base Time Constant Power Gain Power Gain CONDITIONS IC= 10A ; IE= 0 IC= 3mA ; RBE= IE= 10A ; IC= 0 IC= 20mA ; IB= 4mA VCB= 10V; IE= 0 IC= 10mA ; VCE= 10V IC= 10mA ; VCE= 10V IE= 0 ; VCB= 10V;f= 1.0MHz VCB= 10V,IC = 10 mA,f = 31.8 MHz VCE = 10 V,IC = 5mA;f = 45MHz VCE = 10 V,IC = 5mA;f = 200MHz 40 600 MIN 30 19 2 2SC1906 TYP. MAX UNIT V V V 1.0 0.5 V A 1000 1.0 10 33 18 2.0 25 MHz pF ps dB dB isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 isc Websitewww.iscsemi.cn 4 |
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